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Making a Well Defined MgO Layer for Use in an AC Gas Panel

IP.com Disclosure Number: IPCOM000079314D
Original Publication Date: 1973-Jun-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 42K

Publishing Venue

IBM

Related People

Eldridge, JM: AUTHOR [+2]

Abstract

A method is provided for fabricating a gas panel structure in which the MgO dielectric surface, adjacent to the glow discharge in the panel, is free of contamination.

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Making a Well Defined MgO Layer for Use in an AC Gas Panel

A method is provided for fabricating a gas panel structure in which the MgO dielectric surface, adjacent to the glow discharge in the panel, is free of contamination.

In the construction of an alternating current gas panel, films of MgO are excellent dielectric overcoats that function as secondary electron emitters, when bombarded by gaseous ions from the glow discharge. However, such MgO overcoats readily pick up H(2)O, CO(2), CO, H(2)S, dust and other contaminants during various subsequent stages of panel construction, which contaminants are practically impossible or economically untenable to remove. Such contamination has been the cause of voltage drifts in the sustaining voltage of the panel's glow discharge.

To overcome such tendency to attract contaminants, a thin high-purity magnesium film is thermally oxidized to MgO in a high-purity O(2) atmosphere. The oxide grows at the MgO-O(2) interface, because the metallic species is much more mobile than the oxygen. As a result, most impurities will be pinned down deep within the MgO so as not to interfere with the gases used in the panel display.

Prior to the thermal oxidation step, one builds up the gas panel (shown in cross section in the figure) by starting with a glass substrate 2, upon which are deposited a plurality of parallel "X" drive lines 4, only one of which is shown. A relatively thick dielectric layer 6 is deposited over such "X" drive lines...