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High Speed Positive Electron Beam Photoresist Polymers

IP.com Disclosure Number: IPCOM000079329D
Original Publication Date: 1973-Jun-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Gipstein, E: AUTHOR [+2]

Abstract

Copolymers formed from isobutylene and methyl methacrylate have desirable properties as positive electron-beam photoresists. Copolymers containing from about 10 to about 50 molar percent isobutylene have been found suitable, with those copolymers containing from about 10 to about 25 percent isobutylene exhibiting the best properties, combining superior adhesion with rapid degradation under radiation.

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High Speed Positive Electron Beam Photoresist Polymers

Copolymers formed from isobutylene and methyl methacrylate have desirable properties as positive electron-beam photoresists. Copolymers containing from about 10 to about 50 molar percent isobutylene have been found suitable, with those copolymers containing from about 10 to about 25 percent isobutylene exhibiting the best properties, combining superior adhesion with rapid degradation under radiation.

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