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Conversion Between Capacitance and Inductance by a DC Electric Field

IP.com Disclosure Number: IPCOM000079336D
Original Publication Date: 1973-Jun-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 19K

Publishing Venue

IBM

Related People

Hoechli, UT: AUTHOR [+2]

Abstract

A dielectric plate has a capacitance C(o) = epsilon . epsilon(o) . A/t, where epsilon is the relative dielectric constant, A the area and T the thickness. Near an acoustic resonance a reactance L(1) = F(omega) . k/2/, where k is the electromechanical coupling factor, is shunted parallel to the dielectric capacitance. f (omega) is a function *) of the frequency which changes sign at resonance. In SrTiO(3) k is proportional to an externally applied electric field and large enough so that the shunted inductance can outweigh the capacitance. Thus above a critical field the plate acts as an inductance. *) cf. Mason: Piezoelectric Crystals and their application to ultrasonics, van Nostrand 1950, p. 65 f., equations 5.29 & 5.33.

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Conversion Between Capacitance and Inductance by a DC Electric Field

A dielectric plate has a capacitance C(o) = epsilon . epsilon(o) . A/t, where epsilon is the relative dielectric constant, A the area and T the thickness. Near an acoustic resonance a reactance L(1) = F(omega) . k/2/, where k is the electromechanical coupling factor, is shunted parallel to the dielectric capacitance. f (omega) is a function *) of the frequency which changes sign at resonance. In SrTiO(3) k is proportional to an externally applied electric field and large enough so that the shunted inductance can outweigh the capacitance. Thus above a critical field the plate acts as an inductance. *) cf. Mason: Piezoelectric Crystals and their application to ultrasonics, van Nostrand 1950, p. 65 f., equations 5.29 & 5.33.

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