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Control of Silicon Content in Schottky Barrier Diode Metallurgy

IP.com Disclosure Number: IPCOM000079544D
Original Publication Date: 1973-Jul-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Giddings, JJ: AUTHOR [+4]

Abstract

It has been found that the level of free silicon incorporated into a Schottky barrier metallization may have a significant effect on the work functions of the Schottky barrier diode, such as barrier heights and particularly forward barrier heights.

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Control of Silicon Content in Schottky Barrier Diode Metallurgy

It has been found that the level of free silicon incorporated into a Schottky barrier metallization may have a significant effect on the work functions of the Schottky barrier diode, such as barrier heights and particularly forward barrier heights.

The effect of silicon was investigated in a Schottky barrier contact utilizing the structure shown in the drawings, having aluminum layer 12 in contact with the N-type substrate 11; aluminum layer 12 may contain a small amount of copper. An overlayer of silicon 13, which is polycrystalline, is vapor deposited on layer 12.

The amount of silicon incorporated into the aluminum structure may be regulated by a sintering operation, conducted at temperatures in the order of 400 degrees C. to 450 degrees C. on the structure shown in the figure. The longer the sintering is conducted, the higher will be the silicon content in the metallization. The silicon content was found to affect the forward barrier height as follows: Percent Silicon Content Forward Barrier Height 0.0 0.70eV

0.2 0.71eV

0.3 0.73eV

0.5 0.74eV

1.9 0.83eV.

The approach described is one method of incorporating silicon into the metallization. By another method, the silicon may be directly incorporated into the metallization during the deposition of the metal. For example, if the metal is being deposited from vapor, a source of silicon may be included in the vapor. This procedure of direct incorporatio...