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Multijunction Schottky Barrier Diode

IP.com Disclosure Number: IPCOM000079552D
Original Publication Date: 1973-Jul-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 44K

Publishing Venue

IBM

Related People

Dorler, J: AUTHOR [+3]

Abstract

Figs. 1 and 2 illustrate a Schottky barrier device formed by different metals wherein each metal is characterized by its own unique work function, so as to provide an overall or ultimate work function associated with the device. Previously, it is known to adjust the overall work function of a Schottky barrier diode, by forming a metallurgical system comprising more than one metal. However, this approach is somewhat limited when implemented in integrated circuit technology, as sometimes desired metals are not compatible with the integrated circuit process or no metal exists having the desired individual work function.

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Multijunction Schottky Barrier Diode

Figs. 1 and 2 illustrate a Schottky barrier device formed by different metals wherein each metal is characterized by its own unique work function, so as to provide an overall or ultimate work function associated with the device. Previously, it is known to adjust the overall work function of a Schottky barrier diode, by forming a metallurgical system comprising more than one metal. However, this approach is somewhat limited when implemented in integrated circuit technology, as sometimes desired metals are not compatible with the integrated circuit process or no metal exists having the desired individual work function.

The present device is formed on a P- substrate 10 and further includes a buried N+ region 12 and an upper N- epitaxial layer 14. An N+ contact region 16 connects to the buried region 12 and constitutes a cathode contact. The overall anode of the Schottky barrier device is constituted by a first anode metal region 18 contiguous to a second anode region 20. The metal regions 18 and 20 contact the N- region 14, so as to constitute an overall anode contact. A passivating layer 22 completes the device and accessibility to the cathode contact is made through the opening 24, while contact can be made directly to the metallurgical regions 18 and 20.

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