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Gettering Technique Resulting in Defect Free Devices

IP.com Disclosure Number: IPCOM000079775D
Original Publication Date: 1973-Sep-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Poponiak, MR: AUTHOR [+2]

Abstract

In this method, a damaged region or layer is created in the semiconductor body for gettering purposes, without materially disturbing the device regions.

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Gettering Technique Resulting in Defect Free Devices

In this method, a damaged region or layer is created in the semiconductor body for gettering purposes, without materially disturbing the device regions.

In this process, nonconductive impurities such as Ge, Sn, and the like, are ion implanted into the monocrystalline semiconductor body 10, at an energy sufficient to cause penetration to a distance significantly below the surface. As indicated in Fig. 1, a damaged region 12 is formed. If desired, the damaged layer can be formed intermittently as indicated by regions 14 in Fig. 2. Following the bombardment, the body is heated to a temperature sufficiently high and for a time period to anneal the defects in body 10 above the damaged layer. Temperatures on the order of 600-900 degrees C for thirty to sixty minutes will ordinarily be sufficient to achieve this purpose. The damaged layer 12 and 14 will serve as a gettering agent for impurity precipitation.

The conventional field-effect transistor (FET) structure or bipolar structure can then be fabricated in the region above damaged layer 12 by conventional techniques. The technique is applicable both to N and P-channel FET's as well as bipolar devices.

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