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Gettering Technique and Structure

IP.com Disclosure Number: IPCOM000079777D
Original Publication Date: 1973-Sep-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 73K

Publishing Venue

IBM

Related People

Bogardus, EH: AUTHOR [+5]

Abstract

Various techniques have been described for (gettering) unwanted impurities from semiconductors. Such techniques suggest the utilization of borosilicate or phosphosilicate glasses for gettering purposes. Diffusions, such as boron or phosphorous, also act as getterers.

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Gettering Technique and Structure

Various techniques have been described for (gettering) unwanted impurities from semiconductors. Such techniques suggest the utilization of borosilicate or phosphosilicate glasses for gettering purposes. Diffusions, such as boron or phosphorous, also act as getterers.

This method is a technique capable of improving conventional diffused structures. Fig. 1 illustrates a conventional diffused diode structure consisting of a diffused region 10 in a semiconductor body 12. As shown in Fig. 2, ions can be implanted into region 10 utilizing an implant mask 14 to create a highly damaged region 16. The implant can be a neutral ion or an ion of the same conductivity type as the diffusion. The implant dosage should be high enough to create a highly damaged region. This damaged region is an island within the diffused structure capable of gettering unwanted impurities away from the active junction.

Fig. 3 demonstrates the use of the aforedescribed technique in the fabrication of a conventional diffused bipolar structure. The base implant 20 in base region 22 and the emitter implant 24 in emitter region 26 not only serve as gettering sinks, but also serve to improve the metal contact area. A similar collector implant 28 in collector contact 30 serves basically the same function.

The same implant gettering scheme can also be utilized on a junction isolated bipolar structure, as shown in Fig. 4. The solid lines represent the direct implants and t...