Browse Prior Art Database

Range Distribution Determination of Implanted Ions

IP.com Disclosure Number: IPCOM000079778D
Original Publication Date: 1973-Sep-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Kastl, RH: AUTHOR [+2]

Abstract

Range distribution profiles of specific implanted specie ions into semiconductors and various stepping masks is obtained, by first masking the semiconductor substrate to a thickness capable of complete stoppage, e.g., silicon dioxide or silicon.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Range Distribution Determination of Implanted Ions

Range distribution profiles of specific implanted specie ions into semiconductors and various stepping masks is obtained, by first masking the semiconductor substrate to a thickness capable of complete stoppage, e.g., silicon dioxide or silicon.

Stepping material or oxide is masked with photoresist or other suitable material and steps etched incrementally capable of resolving the distribution of a specific ion dose, and sufficiently wide for accurate ellipsometer measurements. An individual or reference step gauge standard is fabricated for each dose or energy level evaluated.

Upon completion of implantation, evaluation of the stepping mask (SiO(2)) is undertaken by ellipsometry. Electrical evaluation can be accomplished by depositing metal electrodes for metal-oxide-silicon (MOS) type measurements, whereupon the mask diode is removed by any suitable means and a resistance profile obtained, followed by heat treatment(s) for surface profile annealing character generation.

1