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Determination of the Phosphorous Content and the Layer Thickness of Phosphorous Silicate Glass Layers

IP.com Disclosure Number: IPCOM000079780D
Original Publication Date: 1973-Sep-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Hoffmeister, W: AUTHOR [+4]

Abstract

Phosphorous silicate glass (PSG) layers are formed during the manufacture of semiconductor circuits as a result of phosphorus diffusion, as well as during the gate stabilization step. It is essential that the phosphorus content and the thickness of such layers be accurately determined, as their values considerably affect the electric characteristics of semiconductor devices.

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Determination of the Phosphorous Content and the Layer Thickness of Phosphorous Silicate Glass Layers

Phosphorous silicate glass (PSG) layers are formed during the manufacture of semiconductor circuits as a result of phosphorus diffusion, as well as during the gate stabilization step. It is essential that the phosphorus content and the thickness of such layers be accurately determined, as their values considerably affect the electric characteristics of semiconductor devices.

By an accurate and fast method for the determination of both parameters, the phosphorus content of the PSG layers is measured by means of X-ray fluorescence. The measured intensity is a function of the number of phosphorus atoms per unit area. Measuring the P-concentration after phosphorus drive-in of the source, drain and emitter region leads to falsified values, since the part of the phosphorus which is diffused from the PSG layer into the silicon wafer also contributes to the emitted PK(alpha) radiation. By measuring the layer resistivity of the n/+/ regions formed during the above-mentioned drive-in step, their phosphorus content can be determined and the value obtained by X-ray fluorescence be corrected correspondingly, thus providing the phosphorus content of the PSG layers. It is beneficial to measure the X-ray fluorescence immediately after the P-deposition process on a separate blank test wafer. The final phosphorus content after the drive-in and stabilization step, respectively, can...