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Forming MgO on Top Al(2)O(3) for Gas Panel Application

IP.com Disclosure Number: IPCOM000079790D
Original Publication Date: 1973-Sep-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Romankiw, LT: AUTHOR

Abstract

The number of process steps and cost of forming MgO on top of an Al(2)O(3) layer is reduced by evaporating or sputtering a thin film of Mg on top of Al in one pumpdown, and then anodizing both Mg and Al in one step.

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Forming MgO on Top Al(2)O(3) for Gas Panel Application

The number of process steps and cost of forming MgO on top of an Al(2)O(3) layer is reduced by evaporating or sputtering a thin film of Mg on top of Al in one pumpdown, and then anodizing both Mg and Al in one step.

The Mg film should be deposited at room temperature to prevent interdiffusion of Mg and Al. The thickness of Mg should be small enough to permit penetration of the current through the MgO to anodize the underlying Al, but sufficiently thick to prevent dissolution in the anodizing solution, which latter should preferably be saturated with MgO.

In an alternate version MgO is present only in selected areas to sharpen the display resolution pattern. In this case, the Mg evaporation step is preceded by a positive resist application, exposure of the resist and development of a pattern. The Mg film is then sputtered through the resist mask, removing unwanted Mg by the Shipley-Mg lift-off technique. The Al, with selectively deposited Mg, is then anodized as in the process described above.

The Al and Mg could be evaporated and anodized in sheet form, Shipley resist applied, and the unwanted MgO etched off using an etchant, such as boiling H(2)O or very dilute H(2)SO(4), etc. A further alternative is to sputter MgO through a mask onto Al(2)O(3) or other glass surface, removing the excess MgO by lift-off or etch-off.

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