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Simple Planar Double Heterojunction Laser Structure

IP.com Disclosure Number: IPCOM000079841D
Original Publication Date: 1973-Sep-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Dumke, WP: AUTHOR

Abstract

A planar double-heterojunction laser structure is provided so that generated laser light is prevented from spreading laterally, achieving good control of the width of the laser light.

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Simple Planar Double Heterojunction Laser Structure

A planar double-heterojunction laser structure is provided so that generated laser light is prevented from spreading laterally, achieving good control of the width of the laser light.

The structure shown in the figure is fabricated by successively depositing, on an N-type GaAs substrate 2, layers of N-type GaAlAs 4, P-type GaAs 6, N-type GaAlAs 8 and N-type GaAs 10. The top surface of this multistructured unit is masked save for parallel stripe openings 12. Through these openings are diffused zinc, whereby the two upper layers 10 and 8 are changed to P-type GaAs and P-type GaAlAs without changing the typeness of the N-type GaAlAs layer 4. Suitable contacts 14 and electrodes 16, shown in dotted lines, are added to the structure to make the final device, a laser array.

In operation, the current to a junction is conducted through the P-type regions of the two upper layers 10 and 8 to the active region, but because of the PN junctions at the sides of each such active region the current cannot spread beyond the area of the stripe opening. Some spreading can occur in the P-type GaAs layer 6 which contributes to the active regions 18 of the array, but, if such layer 6 is lightly doped and thin, the amount of current spreading is negligible.

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