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Fabrication of [(Ga)(Al)(In)](PN) Compounds

IP.com Disclosure Number: IPCOM000079842D
Original Publication Date: 1973-Sep-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Cuomo, JJ: AUTHOR [+2]

Abstract

Considerable interest has developed in the past several years in compound semiconductors for use in a variety of applications, such as lasers, Gunn Effect devices, solar cells, etc. One such class of semiconductor compounds is "alloy" compositions of III-V elements, where the group V elements are phosphorous and nitrogen. Typical of such compounds are, for example, Al(x)(P(y)N(1-y))(1-x)Ga(x)(P(y)N(1-y))(1-x); In(x)(P(y)N(1-y))(1-x), as well as quarternary compositions, (A(x)B(1-x))(C(y)D(1-y)), where A or B is Al, Ga, In, and C or D is P or N.

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Fabrication of [(Ga)(Al)(In)](PN) Compounds

Considerable interest has developed in the past several years in compound semiconductors for use in a variety of applications, such as lasers, Gunn Effect devices, solar cells, etc. One such class of semiconductor compounds is "alloy" compositions of III-V elements, where the group V elements are phosphorous and nitrogen. Typical of such compounds are, for example, Al(x)(P(y)N(1-y))(1- x)Ga(x)(P(y)N(1-y))(1-x); In(x)(P(y)N(1-y))(1-x), as well as quarternary compositions, (A(x)B(1-x))(C(y)D(1-y)), where A or B is Al, Ga, In, and C or D is P or N.

Some problems have been encountered in fabricating the above-mentioned compositions, due to the difficulty in providing phosphorous and nitrogen components in the same reaction vessel. This difficulty has been solved by cosputtering the metal of the compound with a stable compound of the metaloid,
i.e., (P(3)N(5)). Any of a variety of target arrangements may be cosputtered, such that the metal and the metaloid components arrive at the substrate surface in the desired ratios. The substrate temperature and bias may be employed to control composition and crystallinity. Alloys of the metal component can be used as source material in the preparation of quarternary compositions.

Targets of Ga/P(3)N(5) and AlN/P(3)N(5) may be fabricated by weighing gallium metal and aluminum nitride and mixing with the powder P(3)N(5), respectively, under pure ethyl alcohol. After thorough mixing, a ho...