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Novel Epitaxy

IP.com Disclosure Number: IPCOM000079861D
Original Publication Date: 1973-Sep-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Esaki, L: AUTHOR [+3]

Abstract

This description relates to metal epitaxy on semiconductor substrates and semiconductor epitaxy on metal substrates, and repeated epitaxial deposition of alternate layers of semiconductor and metal. More specifically, the semiconductors utilized are GaAs, AlAs, and their pseudobinary alloys and the metal is Al.

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Novel Epitaxy

This description relates to metal epitaxy on semiconductor substrates and semiconductor epitaxy on metal substrates, and repeated epitaxial deposition of alternate layers of semiconductor and metal. More specifically, the semiconductors utilized are GaAs, AlAs, and their pseudobinary alloys and the metal is Al.

Using the technique of molecular beam evaporation (MBE) in ultra-high vacuum, with multiple sources, monocrystalline Al films were deposited on the clean surface of GaAs or Ga(1-x)Al(x)As substrates over a temperature range between room temperature and 400 degrees C. Subsequently, it was observed that monocrystalline GaAs or Ga(1-x)Al(x)As films were grown on the clean Al surface over a temperature range of 500 degrees-600 degrees C. The resulting semiconductor and metal films are smooth and of high quality. The deposition of layers of GaAs or Ga(1-x)Al(x)As and Al can be repetitively carried out with precise control of thickness in each layer, as well as doping the semiconductor layers.

When the (100) surface of the semiconductor was used for the deposition of Al, the growth of the metal film was observed to be in the (110) orientation. When the semiconductor was redeposited on the Al layer, the (100) semiconductor surface was always restored. The epitaxial growth of Al can be partially attributed to the good lattice match with the semiconductor, and to the strong tendency of Al to be tetrahedrally bonded to the As at the semiconductor- Al i...