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Apparatus for Epitaxial Deposition

IP.com Disclosure Number: IPCOM000079888D
Original Publication Date: 1973-Sep-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Bratter, RL: AUTHOR [+6]

Abstract

The present structure provides improved epitaxial deposition apparatus of the type described in U. S. Patent 3,424,629. In the present apparatus, wafers 10 are seated in slots 11 in graphite susceptor 12 which are lined on three sides with a quartz liner 13. It is found that the liner in this structure reduces wafer warpage, due to uneven heat transfer between the susceptor and the wafer and uneven heating of the susceptor. Such warpage, in turn, has resulted in further unequal heat distribution across the wafer because the center of the warped wafer is still touching the substrate while the edges are raised from the substrate, producing additional heat loss at the wafer edges.

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Apparatus for Epitaxial Deposition

The present structure provides improved epitaxial deposition apparatus of the type described in U. S. Patent 3,424,629.

In the present apparatus, wafers 10 are seated in slots 11 in graphite susceptor 12 which are lined on three sides with a quartz liner 13. It is found that the liner in this structure reduces wafer warpage, due to uneven heat transfer between the susceptor and the wafer and uneven heating of the susceptor. Such warpage, in turn, has resulted in further unequal heat distribution across the wafer because the center of the warped wafer is still touching the substrate while the edges are raised from the substrate, producing additional heat loss at the wafer edges. This uneven heating and the attendant warpage having occurred under certain circumstances involving fast-heat cycles, resulted in a greater number of crystallographic defects in the wafer, particularly at the edges.

The quartz insert insures even heating by radiation from the susceptor through the quartz to the wafer. Other refractory materials which have a relatively low-heat conductivity but are transparent to radiant heat may be used in place of the quartz.

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