Browse Prior Art Database

Ion Implanted Diffusion Source

IP.com Disclosure Number: IPCOM000079902D
Original Publication Date: 1973-Sep-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Kastl, RH: AUTHOR [+3]

Abstract

Semiconductor crystallographic damage caused by ion bombardment is avoided by providing a method for dopant diffusion. This method comprises providing a monocrystalline semiconductor substrate with a polycrystalline passivating layer, implanting ions into the polycrystalline layer only, and driving the implanted ions into the monocrystalline substrate by heat treatment within the range of normal diffusion temperatures.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Ion Implanted Diffusion Source

Semiconductor crystallographic damage caused by ion bombardment is avoided by providing a method for dopant diffusion. This method comprises providing a monocrystalline semiconductor substrate with a polycrystalline passivating layer, implanting ions into the polycrystalline layer only, and driving the implanted ions into the monocrystalline substrate by heat treatment within the range of normal diffusion temperatures.

1