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Monocrystalline Silicon Semiconductor Wafer Stress Relief

IP.com Disclosure Number: IPCOM000079906D
Original Publication Date: 1973-Sep-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Brack, K: AUTHOR [+5]

Abstract

Monocrystalline silicon semiconductor wafers often possess crystallographic defects in the form of dislocations, slips and the like. Defects of this nature make certain areas of the wafer unsuitable for semiconductor device application and, therefore, adversely affects process yield. Defects of this nature result from a variety of causes, among which are thermal cycling or other thermally induced stress conditions.

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Monocrystalline Silicon Semiconductor Wafer Stress Relief

Monocrystalline silicon semiconductor wafers often possess crystallographic defects in the form of dislocations, slips and the like. Defects of this nature make certain areas of the wafer unsuitable for semiconductor device application and, therefore, adversely affects process yield. Defects of this nature result from a variety of causes, among which are thermal cycling or other thermally induced stress conditions.

Crystallographic defects are often found about the circumference or edges of the wafer. These defects are avoided or minimized, by providing a semiconductor monocrystalline substrate having at least one slit extending inwardly from the periphery of the substrate. This structure can be provided by any suitable method, among which comprise cutting the wafer per se or cutting a slit or groove in the ingot prior to slicing.

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