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X Ray Sensitive Resists

IP.com Disclosure Number: IPCOM000079907D
Original Publication Date: 1973-Sep-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Feder, R: AUTHOR [+2]

Abstract

Photoresists have incorporated therein x-ray fluorescent or phosphorescent material, so as to make the resists useful for x-ray lithography.

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X Ray Sensitive Resists

Photoresists have incorporated therein x-ray fluorescent or phosphorescent material, so as to make the resists useful for x-ray lithography.

X-rays do not normally interact with organic materials of the types used as photoresists, because such materials do not absorb x-rays efficiently. Materials are, therefore, incorporated into the resist which are fluorescent or phosphorescent. When the resist is subjected to x-rays the fluorescent or phosphorescent materials produce ultraviolet or visible radiation which is capable of exposing the photoresist.

Useful phosphors include, for example, zinc sulfide, lead doped barium silicate, dysprosium doped calcium pyrophosphate, thallium doped caesium bromide and thallium doped sodium iodide. Examples of molecular systems are anthracene, 1,4- diphenylbutadiene, acetylacetonate and tris - 1, 10- phenanthroline complexes of terbium, gadolinium and cerium which can be molecularly dispersed within the photoresist.

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