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Fabrication of Variable Current Density Josephson Junctions

IP.com Disclosure Number: IPCOM000079928D
Original Publication Date: 1973-Sep-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Elridge, JM: AUTHOR [+2]

Abstract

This method allows the production of Josephson junctions with insulation > 50 angstroms between superconductive electrodes, without diminishing the tunnel current available with insulation of 10 - 30 angstroms.

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Fabrication of Variable Current Density Josephson Junctions

This method allows the production of Josephson junctions with insulation > 50 angstroms between superconductive electrodes, without diminishing the tunnel current available with insulation of 10 - 30 angstroms.

This is achieved by substituting the oxide layer PbO in the usual Pb/PbO/Pb Josephson junction with an oxide of an alloy of indium and lead. The oxide of the junction Pb/PbO-In(2)O(3)/Pb even though thicker than the PbO layer (50 Divided by 70 angstroms instead of 30 angstroms), allows the same current density of the Pb/PhO/Ph junction.

The current density of the junction strongly depends on the amount of indium in the oxide layer so that by controlling the Pb-In alloy and its oxidation for different locations on a single chip, junctions having different predetermined current densities are formed on the chip.

Tellurium, tin, bismuth or other metals other than lead having valence > 2 can be used instead of indium.

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