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Sputtering Garnet Compound Layer

IP.com Disclosure Number: IPCOM000079930D
Original Publication Date: 1973-Sep-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Cuomo, JJ: AUTHOR [+4]

Abstract

This method is used for producing film with a garnet stoichiometric composition A(x) B(3-x) C(y) D(5-y) O(12). where O < x < 3 and O < y < 3, and wherein

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Sputtering Garnet Compound Layer

This method is used for producing film with a garnet stoichiometric composition A(x) B(3-x) C(y) D(5-y) O(12). where O < x < 3 and O < y < 3, and wherein

A is a rate earth element of the lanthanide series including Gd, Eu, Tb, Er:
B is Y, La or Sc;

C is Al or Ga; and, D is Fe, Ni or Co.

The method comprises the steps of:
(a) establishing a target with the stoichiometric composition

and a substrate with the garnet structure;
(b) establishing radio-frequency power at the target

approximately in the range of 2 watts/sq in to

23 watts/sp in; and
(c) establishing the substrate at a temperature

approximately in the range of 500 Degrees C

to 650 Degrees C, whereby the stoichiometric composition is sputtered onto the substrate.

The garnet films obtained by this method have suitable properties for bubble domain applications.

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