Browse Prior Art Database

High Quality High Density Power Devices

IP.com Disclosure Number: IPCOM000080004D
Original Publication Date: 1973-Oct-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Fodor, AG: AUTHOR

Abstract

Power semiconductor devices usually involve mesa shaped structures both for transistors and diodes. If the power semiconductor is to have a high-breadkown voltage, it is usually particularly sensitive to any source of contamination, and therefore is subject to reliability problems.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 96% of the total text.

Page 1 of 1

High Quality High Density Power Devices

Power semiconductor devices usually involve mesa shaped structures both for transistors and diodes. If the power semiconductor is to have a high- breadkown voltage, it is usually particularly sensitive to any source of contamination, and therefore is subject to reliability problems.

In order to protect the collector-base junction and greatly reduce its sensitivity to contaminants but also permit the optimal use of the device surface, the use of a sputtered quartz passivated mesa structure in conjunction with two levels of metallurgy is suggested. The sputtering of quartz over the structure presents several advantages: - high-quality passivation, particularly over the collector- base junction, - no need of subsequent thermal steps, therefore, being usable directly after the deposition of the first level of metallurgy, and - the inherent properties of the sputtered quartz for photoengraving high-definition pattern.

The latter characteristic may be successfully combined with the provision of two levels of metallurgy at the surface of the structure.

In addition, the application to power devices of the double level of metallurgy appears to be very promising: - reduction of the size of the chip, - the bonding surfaces of the chip may be designed independently of the location of active regions, e.g., base or emitter regions and more particularly for multiemitter structures.

The above-described concept is valuable for power mesa sh...