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Browse Prior Art Database

Double Coating Method Using Positive Resist

IP.com Disclosure Number: IPCOM000080019D
Original Publication Date: 1973-Oct-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Esch, RP: AUTHOR

Abstract

This description relates to a method for double coating a wafer with positive resist, the positive resist being of the type including phenolformaldehyde as a resin.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

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Double Coating Method Using Positive Resist

This description relates to a method for double coating a wafer with positive resist, the positive resist being of the type including phenolformaldehyde as a resin. The method comprises the steps of: 1) Applying a primary positive resist coat to a silicon wafer preferably by spin casting, the application resulting in a soft film of uniform thickness; 2) Prebaking the coated wafer for a time duration and at a temperature suitable for adhesion of the coat of the wafer; 3) Exposing selected portions of the positive resist coat to ultraviolet light through a photomask; 4) Developing the exposed photoresist away; 5) Post baking the developed pattern between 155 degrees C to 170 degrees C for approximately 45 minutes; 6) Repeating steps 1) and 2) for application of the second coat; 7) Exposing the same selected portions of the positive resist coat as in step 3) to ultraviolet light through a slightly larger coat; 8) Developing the exposed positive resist away: and 9) Post baking the developed pattern between 100 degrees C to 140 degrees C.

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