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Very Low Frequency Etching of Aluminum Interconnect Patterns

IP.com Disclosure Number: IPCOM000080073D
Original Publication Date: 1973-Oct-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Htoo, MS: AUTHOR [+2]

Abstract

Very low-frequency etching of aluminum interconnect patterns facilitates efficient removal of gas bubbles which are generated during metal etching. This technique eliminates the use of high-frequency ultrasonics and assures improved process control.

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Very Low Frequency Etching of Aluminum Interconnect Patterns

Very low-frequency etching of aluminum interconnect patterns facilitates efficient removal of gas bubbles which are generated during metal etching. This technique eliminates the use of high-frequency ultrasonics and assures improved process control.

The technique involves moving the workpieces in a vertical direction relative to the etching solution, at a very low frequency of 1 to 2 cycles/second. The optimum distance of movement varies with the size of the workpiece. It is +/- 0.250 inch for 2 1/4'' diameter wafers.

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