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Process for Etching Silicon Overlay Films

IP.com Disclosure Number: IPCOM000080081D
Original Publication Date: 1973-Oct-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Chiocsky, C: AUTHOR [+6]

Abstract

Silicon overlay technology typically involves the deposition of aluminum-copper-silicon at about 200 degrees C. Etching is accomplished using phosphoric-nitric etchant if the silicon film is thin, or using a dual etch including a silicon etchant if the silicon is thick. An undesirable residue often results that is believed to consist of silicon or silicon intermetallics.

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Process for Etching Silicon Overlay Films

Silicon overlay technology typically involves the deposition of aluminum- copper-silicon at about 200 degrees C. Etching is accomplished using phosphoric-nitric etchant if the silicon film is thin, or using a dual etch including a silicon etchant if the silicon is thick. An undesirable residue often results that is believed to consist of silicon or silicon intermetallics.

Undesirable residue is avoided by first depositing the aluminum-copper at about 200 degrees C, but then decreasing substrate temperature to less than 120 degrees C for depositing the silicon. By depositing the silicon at the reduced temperature, silicon intermetallics are prevented from forming. Standard photoresist is applied and the silicon overlay is etched away in a silicon etch and then the aluminum-copper is etched away in a phosphoric-nitric etchant.

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