Browse Prior Art Database

Reduction of Parasitic Effects by Ion Bombardment

IP.com Disclosure Number: IPCOM000080148D
Original Publication Date: 1973-Nov-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Ghafghaichi, M: AUTHOR [+3]

Abstract

With the increasing densities in integrated circuits, the need has arisen for expedients to supplement isolation regions, i.e., regions which surround the devices or circuit elements to prevent short-circuits. There may be many instances where complete isolation is unnecessary and even undesirable. However, in such structures, it may be necessary to control parasitic electrical effects.

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Reduction of Parasitic Effects by Ion Bombardment

With the increasing densities in integrated circuits, the need has arisen for expedients to supplement isolation regions, i.e., regions which surround the devices or circuit elements to prevent short-circuits. There may be many instances where complete isolation is unnecessary and even undesirable. However, in such structures, it may be necessary to control parasitic electrical effects.

Such parasitic effects may be controlled by the simple expedient of localized ion bombardment. Such ion bombardment, when conducted at a relatively "light" level, will reduce carrier lifetime and, thereby, minimize parasitic electrical phenomena at the integrated circuit surfaces.

The expedient of this device is particularly advantageous in integrated circuits employing lateral devices. In the figure, there is shown a plan view of the application of the present expedient to an integrated circuit employing lateral transistors, integrated with complementary vertical transistors. The basic structure which has been modified is of the type described in Swiss Patent No. 520,407, issued March 15, 1972. The structure which is formed in an N epitaxial layer comprises a plurality of NPN multiemitter vertical transistors 13, each comprising emitters 10, base 11, and the epitaxial region 12 which serves as the collector. On the other hand, the PNP lateral transistors comprise emitter 14, epitaxial region 12 which serves as the base, and region...