Browse Prior Art Database

Silicon Wafers with High Dielectric Integrity

IP.com Disclosure Number: IPCOM000080195D
Original Publication Date: 1973-Nov-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Green, JM: AUTHOR [+2]

Abstract

A high-temperature heat treatment of silicon wafers is provided to improve the dielectric integrity of subsequently grown silicon dioxide films.

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Silicon Wafers with High Dielectric Integrity

A high-temperature heat treatment of silicon wafers is provided to improve the dielectric integrity of subsequently grown silicon dioxide films.

Initially, a silicon wafer is heated at a temperature between 1000-1400 degrees C in hydrogen. The heating is for about three minutes, but long enough for the temperature of the wafer to reach equilibrium with the temperature of the oven. As soon as possible, to avoid contamination with the atmosphere, the silicon wafer is oxidized to a thickness of 100 angstroms-1000 angstroms, followed by cooling in oxygen.

The above-noted sequence of steps considerably increases the intensity of the electric field that can be applied to the SiO(2) film so produced, before dielectric integrity breaks down.

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