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Automatic Infrared Ellipsometer for Characterizing Films on Multilayer Surfaces

IP.com Disclosure Number: IPCOM000080286D
Original Publication Date: 1973-Nov-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 2 page(s) / 25K

Publishing Venue

IBM

Related People

Gardner, EE: AUTHOR [+2]

Abstract

Utilizing conventional ellipsometer techniques and infrared light having a wavelength between 2.5 and 15 microns, thin films on multilayer substrates are capable of being measured automatically.

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Automatic Infrared Ellipsometer for Characterizing Films on Multilayer Surfaces

Utilizing conventional ellipsometer techniques and infrared light having a wavelength between 2.5 and 15 microns, thin films on multilayer substrates are capable of being measured automatically.

Referring to the drawing, the method comprises providing a light source 1 having a wavelength between 2.5 and 15 microns directing the light through a wire grid polarizer 2 to produce a linear beam. This beam, in turn, passes through a Fresnel rhomb compensator 3 which forms elliptically polarized light to the sample 4, which is mounted on a conventional X-Y positioning table 5 associated with the alignment station 6.

Reflected light is processed through a combination position encoder 7, wire grid polarizer 8 and pyroelectric detector 9. A suitable motor 10 is used to rotate the polarizer 8.

The instrument characterized by the aforesaid apparatus is useful in measuring the thickness of photoresist films superimposed on multilayer materials, polysilicon, silicon dioxide, epitaxial layers, and the like.

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