Browse Prior Art Database

Integrated Circuit Including Bipolar and Complementary Metal Oxide Silicon Devices

IP.com Disclosure Number: IPCOM000080301D
Original Publication Date: 1973-Nov-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 2 page(s) / 83K

Publishing Venue

IBM

Related People

Chin, WB: AUTHOR [+3]

Abstract

This is a process for fabricating high performance bipolar and complementary field-effect transistors, in which the bipolar device has a subcollector region which is formed in the same steps as the pocket for the field-effect transistor and the isolation regions surrounding the device.

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Integrated Circuit Including Bipolar and Complementary Metal Oxide Silicon Devices

This is a process for fabricating high performance bipolar and complementary field-effect transistors, in which the bipolar device has a subcollector region which is formed in the same steps as the pocket for the field- effect transistor and the isolation regions surrounding the device.

In Fig. 1A, by chemical vapor deposition, a 800 angstroms to 1000 angstroms thick layer 2 of silicon dioxide is deposited, preferably by pyrolytical deposition on P- substrate 1. This step is followed by chemical vapor deposition of a highly doped N+ type layer 3, such as arsenic doped oxide.

By means of a negative photoresist process, the layers 2 and 3 are etched to leave an island of arsenic doped oxide and SiO2 on the P- substrate 1.

The process is repeated with a less highly doped layer of arsenic to form a second island of oxide 6 and arsenic doped oxide 4, which is less heavily doped than arsenic doped oxide 3.

A high temperature drive-in step is performed to form a high concentration arsenic region 12, having surface concentration of around 10/20//cm/3/ and also a low concentration arsenic region 10 having a surface concentration of around 10/19//cm/3/. The surface of substrate 1 is cleaned by standard etching techniques, and then by chemical vapor deposition of boron doped oxide directly onto the substrate 1, P+ regions 14 and 16 are formed. Alternatively, the P+ regions can be formed by th...