Browse Prior Art Database

High Voltage Fast Recovery Diode Module

IP.com Disclosure Number: IPCOM000080342D
Original Publication Date: 1973-Dec-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 2 page(s) / 26K

Publishing Venue

IBM

Related People

Cielo, JR: AUTHOR [+2]

Abstract

As a general rule, a high-voltage diode with fast reverse recovery characteristics has an initially high impedance and slow recovery to steady-state impedance in the forward direction.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

High Voltage Fast Recovery Diode Module

As a general rule, a high-voltage diode with fast reverse recovery characteristics has an initially high impedance and slow recovery to steady-state impedance in the forward direction.

For the forced turn-on characteristic shown in Fig. 1, diode D1 alone would develop an instantaneous forward voltage 10 several orders of magnitude greater than the normal steady-state forward drop VF. In addition to the diode's voltage rating, the relative magnitude of peak current to the diode's maximum average current rating and the applied instantaneous DI/DT, directly influence the magnitude of the voltage overshoot for a given diode.

The circuit in Fig. 2 provides an equivalent high voltage, fast reverse recovery diode with a minimum instantaneous forward drop. This circuit consists of a series of two lower voltage diodes D2 and D3, connected in parallel with D1. In order to insure good forward recovery 12, diodes D2 and D3 are selected at forward currents several times greater than peak 14 applied. Diode D1 is selected for fast reverse recovery characteristics.

The combination of diodes D1-D3 provides an initial low-impedance path in the forward direction through D2 and D3. When the forward drop through D1 falls below that of the D2, D3 series, D2 and D3 nearly shut off and, therefore, the circuit exhibits the fast reverse recovery characteristics of diode D1 alone.

1

Page 2 of 2

2

[This page contains 1 picture or other non-text object...