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Semiconductor Photoresist Mask Process

IP.com Disclosure Number: IPCOM000080356D
Original Publication Date: 1973-Dec-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Jodoin, NR: AUTHOR [+2]

Abstract

Masks utilized in selective etching employing photoresist materials may have defects in the form of "pinholes" or partial pinholes. Masks are usually formed by deposition of chromium and, heretofore, the pinhole defect problem was eliminated by evaporating two or more chromium layers in forming the mask.

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Semiconductor Photoresist Mask Process

Masks utilized in selective etching employing photoresist materials may have defects in the form of "pinholes" or partial pinholes. Masks are usually formed by deposition of chromium and, heretofore, the pinhole defect problem was eliminated by evaporating two or more chromium layers in forming the mask.

The foregoing problem is alleviated by using two or more layers of different metals, wherein each metal is capable of being selectively etched by an etchant which will not attack the other metal layer or layers. A separate coating of photoresist is employed for each layer to be etched, insuring no propagation of inherent resist defects.

An example of combination or composite metal masks is chromium and copper, where about 1000/o/ of chrome is deposited upon a glass substrate followed by the deposition of 1000 A/o/ copper. The copper is coated with photoresist and the resist imaged with the desired pattern. The copper is then etched with any suitable etchant which will not attack chromium. After etching, a second coating of photoresist is applied to the plate, imaged and the chrome layer etched with an etchant which will not attack copper, and the photoresist is removed.

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