Browse Prior Art Database

Fabrication of Injection Laser

IP.com Disclosure Number: IPCOM000080388D
Original Publication Date: 1973-Dec-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 2 page(s) / 42K

Publishing Venue

IBM

Related People

DeGelormo, JF: AUTHOR [+2]

Abstract

A holder 2 has been devised for making double-heterojunction lasers in such a manner that four sides rather than only two sides, of a GaAs active region are surrounded by Al(x)Ga(1-x)As higher bandgap material to produce a "quadruple" heterojunction diode.

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Fabrication of Injection Laser

A holder 2 has been devised for making double-heterojunction lasers in such a manner that four sides rather than only two sides, of a GaAs active region are surrounded by Al(x)Ga(1-x)As higher bandgap material to produce a "quadruple" heterojunction diode.

Double-heterojunction injection lasers have very low-threshold currents at room temperatures. The threshold current can be reduced if four sides of the GaAs, which serve as the active regions, are surrounded by higher bandgap material. A holder for implementing such a quadruple-heterojunction is described.

A sliding member 2, which is slidable along a supporting member 4, contains cutouts or bins 6A, 6B, 6C, 6D, for containing desired melts. Bin 6B that will contain the material GaAs that will form the active region of the laser includes a mask 8. The latter can be made of graphite, metal, Al(2)O(3) or any other material in Which well-defined, evenly spaced, slots 10 can be cut. Such melt forms the desired rectangularly shaped active regions that are then successively covered with the contents of bin 6C and bin 6D to form the heterojunction of Fig.
2. Obviously many different shaped heterojunctions can be made using different masks.

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