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Field Induced Tunnel Diode

IP.com Disclosure Number: IPCOM000080458D
Original Publication Date: 1973-Dec-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Fischer, W: AUTHOR

Abstract

Tunnel diodes consist of a PN junction having very high-doping levels on both sides. In integrated circuits two highly oppositely doped regions are difficult to obtain, since the second diffusion causes a dispersion of the first, which, in turn, leads to a reduced doping level on one side.

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Field Induced Tunnel Diode

Tunnel diodes consist of a PN junction having very high-doping levels on both sides. In integrated circuits two highly oppositely doped regions are difficult to obtain, since the second diffusion causes a dispersion of the first, which, in turn, leads to a reduced doping level on one side.

The tunnel diode shown in the figure initially consists of a P semiconductor body including an N+ zone. The contacted N+ zone forms the cathode of a normal junction diode and the contacted P semiconductor body the anode. Laterally to the N+ zone, a field electrode is arranged which is separated from the surface of the P semiconductor body by an isolating layer.

Application of a suitable potential to the field electrode causes a field induced enhancement P+ zone to be formed in the semiconductor body. This zone together with the N+ zone forms the N+P+ tunnel junction.

The characteristic of the device is alterable between that of a normal junction diode and that of a tunnel diode, by changing only the potential of the field electrode.

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