Browse Prior Art Database

Method for MOSFET Threshold Voltage Stabilization

IP.com Disclosure Number: IPCOM000080511D
Original Publication Date: 1973-Dec-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Chaudhari, PK: AUTHOR [+2]

Abstract

It is believed field-effect transistor threshold voltage shifts are due, at least in part, to mobile positive ions lodged at the interface of the dielectric and metalization. Where double-dielectric films are desirable, mobile ions become lodged at the interface of the dielectric layers. The source of these ions is residual impurities remaining in the first dielectric (SiO(2)).

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Method for MOSFET Threshold Voltage Stabilization

It is believed field-effect transistor threshold voltage shifts are due, at least in part, to mobile positive ions lodged at the interface of the dielectric and metalization. Where double-dielectric films are desirable, mobile ions become lodged at the interface of the dielectric layers. The source of these ions is residual impurities remaining in the first dielectric (SiO(2)).

It has been found that the addition of not more than 3 mol percent POCl(3) to the first SiO(2) insulation layer will effectively combine with the residual impurity ions, e.g., sodium and prevent migration into the second dielectric on the composite dielectric interface during subsequent annealing or processing steps.

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