Browse Prior Art Database

Selectively Depositing SiO(2) Glass Layers

IP.com Disclosure Number: IPCOM000080522D
Original Publication Date: 1974-Jan-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 2 page(s) / 77K

Publishing Venue

IBM

Related People

Beyer, KD: AUTHOR [+2]

Abstract

Doped or undoped glass layers covering specific areas of a silicon substrate can be deposited and shaped with an electron beam by this method.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Selectively Depositing SiO(2) Glass Layers

Doped or undoped glass layers covering specific areas of a silicon substrate can be deposited and shaped with an electron beam by this method.

In the method, doped or undoped silicone resin solutions are spun on a wafer 6, having an epitaxial layer 12, creating a thin solid resin film 10 covering the wafer surface. Upon electron-beam exposure, the silicon resin is further cross- linked. The unexposed regions of the silicon resin can be dissolved with a suitable etchant. The method is particularly useful for forming dielectrically isolated pockets in an integrated circuit device.

As shown in Fig. 1 a layer 10 of a silicone resin, as for example butylacitate solution, is spun on the wafer filling channel 14, which surrounds the silicon region 16. The layer 10 in channel 14 is then exposed to an electron beam, having a dosage in the region of 4 x 10/-6/ coulombs per centimeter squared at 15 KV. After irradiation, the nonirradiated polymer area of layer 10 is dissolved in an organic solvent. The cross-linked resin in channel 14 is then oxidized in an asher, under an O(2) or O(3) atmosphere to SiO(2). The resultant structure shown in Fig. 2 has a relatively planar surface with pocket 16 electrically isolated by annular SiO(2) region 18.

1

Page 2 of 2

2

[This page contains 2 pictures or other non-text objects]