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Electron Beam Resist Process

IP.com Disclosure Number: IPCOM000080528D
Original Publication Date: 1974-Jan-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Enichen, WA: AUTHOR [+4]

Abstract

Resist adhesion in an etching process is improved by the use of a combination of negative and positive resist.

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Electron Beam Resist Process

Resist adhesion in an etching process is improved by the use of a combination of negative and positive resist.

To etch via holes in a sputtered quartz layer during semiconductor device manufacture an adhesion promoting layer of a hexaalkyldisilazane compound, such as hexamethyldisilazane, is first coated on the quartz layer. A layer of a negative resist such as KTFR* resist is then added, followed by a layer of positive resist such as polymethyl methacrylate. The resist layers are exposed pattern-wise to an electron beam, which acts to degrade the positive resist and cross-link the negative resist in the exposed areas. The positive resist is developed and the negative resist layer in the exposed areas is burned out by heating in a dry asher. The exposed quartz layer is then etched. * Trademark of Eastman Kodak Company.

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