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Localized Semiconductor Diffusions Utilizing Local Laser Melting in Doping Atmospheres

IP.com Disclosure Number: IPCOM000080600D
Original Publication Date: 1974-Jan-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Hutchins, GL: AUTHOR

Abstract

It is known that laser melting of thin semiconductor films can be used to fabricate devices on insulating substrates. It is also known that dopant incorporation can be obtained during the film deposition or afterward by, for example, ion implantation.

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Localized Semiconductor Diffusions Utilizing Local Laser Melting in Doping Atmospheres

It is known that laser melting of thin semiconductor films can be used to fabricate devices on insulating substrates. It is also known that dopant incorporation can be obtained during the film deposition or afterward by, for example, ion implantation.

This description teaches that localized laser induced diffusions can be performed on regular semiconductor substrates, or thin-film deposits on insulating substrates (large area-low cost application).

The method is simple in concept, and the investigation of parameters can be relatively straight forward.

A swept laser beam, or perhaps an electron beam of sufficient residence-time x power to melt a local semiconductor area (path) or a fixed pulse of sufficient time x power to melt a spot, can melt in an atmosphere of the proper concentration of doping atoms, to provide the finished melted zone with the proper resistivity and carrier concentration for the device characteristics desired. The diffusion only occurs in the melted region, the adjacent regions will be largely unaffected by the process. The heating is local, therefore-adjacent devices are untouched by the diffusion process. Also it is possible to do many kinds of devices on one chip with any combination of diffusion steps, because of the local nature of the process.

The regulation of the process would be in regulating laser beam power density and sweeping or fixed spot irr...