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Formation of Isolated Device Quality Semiconductor Films on a Foreign Substrate

IP.com Disclosure Number: IPCOM000080614D
Original Publication Date: 1974-Jan-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 2 page(s) / 46K

Publishing Venue

IBM

Related People

Blum, JM: AUTHOR [+3]

Abstract

Proposed is the use of semiconducting island arrays fabricated as seed crystals, upon which crystals of greater thickness may be grown.

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Formation of Isolated Device Quality Semiconductor Films on a Foreign Substrate

Proposed is the use of semiconducting island arrays fabricated as seed crystals, upon which crystals of greater thickness may be grown.

The principle of operation depends on the differences of properties of nucleation-rate and/or crystalline perfection of materials grown epitaxially upon a substantially single-growth seed, as compared and contrasted to those grown on a noncrystalline or otherwise foreign substrate under the same growth conditions. These resultant properties in different areas yield a much higher rate for chemical etching in the nonepitaxial areas. The key step is, therefore, growth under conditions such that growth is epitaxial on the seed, but of poor (e.g., very fine- grain) material on the surrounding substrate. This may be achieved by the proper combination of growth conditions, primarily temperature of growth.

The illustration below is for a vapor phase epitaxy (VPE) vapor process, but other growth techniques, such as LPE liquid or sputtering onto a heated substrate, may be used; i.e., any technique known to give epitaxially grown material on a crystalline substrate at temperatures substantially below the melting temperature of that substrate.

Fig. 1 shows a fabricated island array, fabricated with Si islands on a fused quartz substrate. Fig. 2 shows the cross section of one island in the array. Subsequent steps are as follows:

Fig. 3) Growth of a layer of silico...