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Semiconductor Diffusion Source Apparatus

IP.com Disclosure Number: IPCOM000080624D
Original Publication Date: 1974-Jan-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 2 page(s) / 48K

Publishing Venue

IBM

Related People

Lewis, CH: AUTHOR

Abstract

Phosphorous semiconductor diffusions are carried out using POCI(3) and an inert carrier gas, such as nitrogen, in conventional diffusion furnaces. The drawing illustrates an apparatus for maintaining a contained constant level of phosphorous oxychloride through which a nitrogen gas flow is maintained, thereby allowing for uniform and constant phosphorous concentration.

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Semiconductor Diffusion Source Apparatus

Phosphorous semiconductor diffusions are carried out using POCI(3) and an inert carrier gas, such as nitrogen, in conventional diffusion furnaces. The drawing illustrates an apparatus for maintaining a contained constant level of phosphorous oxychloride through which a nitrogen gas flow is maintained, thereby allowing for uniform and constant phosphorous concentration.

Referring to the drawing, a jacketed material supply container 1 is provided so that a constant liquid head pressure flow is maintained into the entrainment tank 2, which is jacketed to maintain the desired constant temperature. Liquid to be entrained is maintained at a level slightly above the intake line at 3 in stand pipe 8. The liquid level regulates flow from the supply container 1.

Nitrogen or other inert gas is supplied through gas supply intake 4 which is connected to the gas dispersion baffle 5, which may be any inert porous material, e.g., quartz, PYREX* and the like, through which gas will pass. Gas will pass through the liquid 6, entraining the liquid as the stream exists at 7 to the diffusion furnace, not shown. Any suitable temperature control through use of a thermocouple 9 can be used to adjust the jacket heating medium. * Trademark of The Corning Glass Works.

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