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Vapor Deposition of Gallium Arsenide Phosphide Upon Gallium Arsenide Substrates

IP.com Disclosure Number: IPCOM000080635D
Original Publication Date: 1974-Jan-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Philbrick, JW: AUTHOR [+2]

Abstract

Expitaxial films are prepared from volatile compounds of Group IIIb elements, such as gallium, boron and aluminum, and reacted with volatile compounds of Group Vb elements, such as phosphorus and arsenic. Compounds within this group include binary compounds as well as ternary compounds having the formula, for example, GaAs(x)P(1-x), where x is a numerical value greater than 0 and less than 1. With the method for the deposition of epitaxial films, an improvement consists in controlling the total vapor pressure of the gaseous arsenic and phosphorous reactants between limits, to produce an ultimate light-emitting diode having improved external quantum efficiency.

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Vapor Deposition of Gallium Arsenide Phosphide Upon Gallium Arsenide Substrates

Expitaxial films are prepared from volatile compounds of Group IIIb elements, such as gallium, boron and aluminum, and reacted with volatile compounds of Group Vb elements, such as phosphorus and arsenic. Compounds within this group include binary compounds as well as ternary compounds having the formula, for example, GaAs(x)P(1-x), where x is a numerical value greater than 0 and less than 1. With the method for the deposition of epitaxial films, an improvement consists in controlling the total vapor pressure of the gaseous arsenic and phosphorous reactants between limits, to produce an ultimate light-emitting diode having improved external quantum efficiency.

The figure is a graphical log-log representation of the vapor pressure (atm) of phosphine and arsine versus the external quantum efficiency (eta %) of a light- emitting diode. The substrate for the diode is preferably produced by deposition of epitaxial films of gallium arsenide phosphide on gallium arsenide substrates. The production steps comprise reacting in the vapor state, and depositing therefrom in the presence of hydrogen the reaction product of gallium and a hydrogen halide, for example, hydrogen chloride, combined with arsine and phosphine, at a partial pressure between 7 x 10/-3/ and 35 x 10/-3/ atmospheres, at a temperature between 740 degrees C and 800 degrees C, and at a total gas flow of about three liters per min...