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Zinc Diffusion Process for GaAsP

IP.com Disclosure Number: IPCOM000080669D
Original Publication Date: 1974-Jan-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Basi, JS: AUTHOR [+2]

Abstract

N-doped GaAsP is a common material employed in the fabrication of high-efficiency light-emitting diodes. The processing involves zinc diffusion followed by proper metallurgical interconnections. Generally, the quality of the devices fabricated is known to be highly dependent on diffused junction depth, as well as other process parameters. With the efficiency light-emitting diodes. The processing involves zinc diffusion followed by proper metallurgical interconnections. Generally, the quality of the devices fabricated is known to be highly dependent on diffused junction depth, as well as other process parameters.

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Zinc Diffusion Process for GaAsP

N-doped GaAsP is a common material employed in the fabrication of high- efficiency light-emitting diodes. The processing involves zinc diffusion followed by proper metallurgical interconnections. Generally, the quality of the devices fabricated is known to be highly dependent on diffused junction depth, as well as other process parameters. With the efficiency light-emitting diodes. The processing involves zinc diffusion followed by proper metallurgical interconnections. Generally, the quality of the devices fabricated is known to be highly dependent on diffused junction depth, as well as other process parameters. With the diffused junction depth and doping level (in N-GaAsP) shown to determine the efficiency of a given material, various attempts have been made to optimize the process conditions, but all processes seem to have serious limitations. Generally, different existing processes employ different process controls to achieve the desired results, i.e., X(i), where the efficiency is highest at a certain X(j) and is lower at deeper or shallower X(j) values.

A simple diffusion process has been developed for processing all grades of N-GaAsP to yield devices with maximum electroluminescent (EL) efficiency, in which process the junction depth (2.0-16.Ou) does not have any effect on EL efficiency. The flexibility of using a wide range of diffusion source concentrations
(0.2-0.7 wt.% Zn in GaAs-Zn diffused source), permits the diffusi...