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Pattern Etching Fotoceramic or Sputtered SiO(2)

IP.com Disclosure Number: IPCOM000080697D
Original Publication Date: 1974-Jan-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Erez, N: AUTHOR [+2]

Abstract

The basic problem of the etching of ceramic materials is the adhesion of photoresist materials to the ceramic. The photoresist-organic solvent system usually does not spread and wet the surface adequately.

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Pattern Etching Fotoceramic or Sputtered SiO(2)

The basic problem of the etching of ceramic materials is the adhesion of photoresist materials to the ceramic. The photoresist-organic solvent system usually does not spread and wet the surface adequately.

The treatment described below effectively solves this problem by permitting excellent adhesion of photoresist to ceramic surfaces. In this process, a low- vacuum oxygen containing gas subject to an electroless discharge, generates a chemically active oxygen species. Such species is used to bombard the surface of the ceramic in a plasma discharge technique. This has the effect of removing CO(2) and H2(O). Further, most chemisorbed and physically adsorbed materials are affected.

Upon completion of the plasma bombardment, a silane treatment of the surface is then performed. The combination of plasma treatment and silane treatment results in its energistic combination, having the effect of permitting exceptional wetting of the surface by the photoresist organic solvent system, resulting in improved etching results by minimizing undercutting.

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