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Metallization Procedures Compatible With Maskless Ion Beam Circuit Fabrication

IP.com Disclosure Number: IPCOM000080702D
Original Publication Date: 1974-Jan-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Fan, GJ: AUTHOR [+2]

Abstract

A method has been devised for writing a metallic pattern by directing an ion beam onto the surface of a semiconductor. A chemical bath is chosen which can plate out metal from the.bath onto the semiconductor only where the ion beam has dwelt, producing the required metal pattern.

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Metallization Procedures Compatible With Maskless Ion Beam Circuit Fabrication

A method has been devised for writing a metallic pattern by directing an ion beam onto the surface of a semiconductor. A chemical bath is chosen which can plate out metal from the.bath onto the semiconductor only where the ion beam has dwelt, producing the required metal pattern.

Assume that the extraction of the metal from the chemical bath will be accomplished by electroplating. Then the change in conductivity near the surface of a silicon wafer is achieved by deflecting a focussed beam of B/+/ or P/+/ ions along the surface, in accordance with a predetermined pattern. The pattern written on the silicon will have increased conductivity compared to the rest of the wafer. The application of current through the wafer in an electroplating bath, will cause the metal in the bath to plate preferentially on those regions written on by the ion beam.

In the case of electroless plating, the electrochemical state of the surface of the silicon is suitably changed by employing an ion beam of a nondoping species such as A/+/ of Si/+/. Changes at the surface attributable to the damage will assist in nucleating the electroless plating process.

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