Browse Prior Art Database

Double Heterojunction Laser

IP.com Disclosure Number: IPCOM000080703D
Original Publication Date: 1974-Jan-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Blum, JH: AUTHOR [+2]

Abstract

A double-heterojunction (DH) laser has been devised which operates using reduced threshold currents.

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Double Heterojunction Laser

A double-heterojunction (DH) laser has been devised which operates using reduced threshold currents.

In a conventional DH laser, the active region is GaAs and the compound used, on both sides of the GaAs to form the two junctions, is Alx Ga(0.5- x)In(0.5)P. Since Alx Ga(0.5-x)In(0.5) matches very closely the lattice of GaAs, the two materials can be grown epitaxially with a minimum of strain and imperfections between the two materials. Consequently Alx Ga(0.5-x)In(0.5)P is a good candidate for making DH lasers, when GaAs is used as the active region of the DH laser.

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