Browse Prior Art Database

Enhanced Overheating Protection Scheme for FET Storage

IP.com Disclosure Number: IPCOM000080826D
Original Publication Date: 1974-Feb-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Brown, EC: AUTHOR

Abstract

The power supply 10 in field-effect transistor (FET) storage arrays 12 can be used to provide protection from overheating of the arrays.

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Enhanced Overheating Protection Scheme for FET Storage

The power supply 10 in field-effect transistor (FET) storage arrays 12 can be used to provide protection from overheating of the arrays.

As the temperatures of a field-effect transistor storage array 12 increases the power supply current I will decrease. This change in current can be used to trip an undercurrent detector 14 to turn power off, and thereby protect the array from overheating.

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