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Selective Growth of GaAs

IP.com Disclosure Number: IPCOM000080867D
Original Publication Date: 1974-Feb-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Bischoff, BK: AUTHOR [+2]

Abstract

A process is described for selectively depositing GaAs on nucleating sites on sapphire substrates. Basically, the process utilizes the difference in nucleation of GaAs on a stable material such as tungsten or sputtered GaAs, as opposed to the sapphire substrate therefore.

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Selective Growth of GaAs

A process is described for selectively depositing GaAs on nucleating sites on sapphire substrates. Basically, the process utilizes the difference in nucleation of GaAs on a stable material such as tungsten or sputtered GaAs, as opposed to the sapphire substrate therefore.

The GaAs material grown selectively may be polycrystalline or single crystal, depending upon the crystallinity of the substrate. For example, tungsten may be epitaxially grown on the sapphire substrate. Thereafter, a chemical vapor deposition reaction is employed to grow the GaAs on the nucleating tungsten, and not on the exposed sapphire areas. Other nucleating materials, such as sputtered GaAs, may as readily be employed. The process may be employed to fabricate laser arrays and the like.

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