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Ion Implantation Sweeping with Accurate Energy Feedback Control

IP.com Disclosure Number: IPCOM000080870D
Original Publication Date: 1974-Feb-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Hammer, WN: AUTHOR [+2]

Abstract

A method has been devised for providing control of the energy of an ion implanting beam, so that the latter's energy is uniform while it sweeps across relatively large areas.

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Ion Implantation Sweeping with Accurate Energy Feedback Control

A method has been devised for providing control of the energy of an ion implanting beam, so that the latter's energy is uniform while it sweeps across relatively large areas.

Fig. 1 is a plan view of the schematic structure for carrying out the method and Fig. 2 is a vertical view of that schematic structure. An ion beam 2 enters a pair of electrostatic sweep plates 4 that vertically deflect the beam at a rate of a hundred cycles/sec.

The swept beam impinges upon slits 6 that intercept isotopes and other "debris" not in the main ion beam, allowing the latter to pass through slits 8, the latter having a smaller opening than the opening in slits 6. Part of the main transmitted beam, when it hits the metal forming slits 8, will result in signals being sent back to an energy stabilizer 10. The stabilizer sends signals to an accelerator energy generator 12 for modifying the energy of ion beam 2, bringing the latter back to a predetermined energy value. A target 14, moving transversely to the swept beam, is subjected to ion bombardment by the controlled beam.

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