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Browse Prior Art Database

Ultrafine Line Projection System

IP.com Disclosure Number: IPCOM000080891D
Original Publication Date: 1974-Feb-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 2 page(s) / 41K

Publishing Venue

IBM

Related People

Feder, R: AUTHOR [+2]

Abstract

The technique described herein will theoretically allow geometries as small as approx.4 angstroms, to be written with submicron geometries on photoresists.

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Ultrafine Line Projection System

The technique described herein will theoretically allow geometries as small as approx.4 angstroms, to be written with submicron geometries on photoresists.

Extremely short wavelength radiation is required to print submicron geometries on photoresist without requiring contact printing.

It has been suggested recently that a parallel beam of x-rays may be used to record submicron geometries, analogous to the photolithographic process. The x-ray mask is initially written by an electron-beam technique.

It is proposed that a convergent beam of x-rays permits a relatively large mask to be reduced to any size, consistent with the wavelength of the x-rays being used. By introducing a curved crystal monochromotor in the path of a diverging x-ray source, as illustrated by Fig. 1A, the diffracted beam will converge at some distance from the crystal. Where one monochromotor is used, only one dimension will be convergent, as illustrated by Figs. 1B and 1C. By using two crystals placed orthogonal to each other, a two-dimensional convergence will be attained.

A one-dimensional converging system is illustrated in the drawings. However, two-dimensional convergent beam can be obtained, either by two perpendicular curved crystals or by a double-bent crystal.

The technique described herein would allow the x-ray mask to be written by a conventional optical phototechnology procedure. The smallest geometries would not be smaller than 2-5 microns. These r...