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Capacitor Diode Memory Cell Process

IP.com Disclosure Number: IPCOM000080918D
Original Publication Date: 1974-Mar-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 2 page(s) / 49K

Publishing Venue

IBM

Related People

Kalter, HL: AUTHOR

Abstract

This process provides capacitor-diode memory cells of the type described in IBM Technical Disclosure Bulletin, Vol. 15, No. 9, February 1973, pp. 2887-2889, wherein data is stored in a capacitor and a control device, such as a diode serially connected with the capacitor, has forward and reverse characteristics which are different.

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Capacitor Diode Memory Cell Process

This process provides capacitor-diode memory cells of the type described in IBM Technical Disclosure Bulletin, Vol. 15, No. 9, February 1973, pp. 2887-2889, wherein data is stored in a capacitor and a control device, such as a diode serially connected with the capacitor, has forward and reverse characteristics which are different.

The structure resulting from the process is illustrated in Fig. 1 in plan view and in Figs. 2 and 3 which are sections taken through lines 2-2 and 3-3, respectively, indicated in Fig. 1.

The process is as follows:
1) Provide a single-crystal insulating substrate 10 made of,

e.g., sapphire, spinel or beryllium oxide.
2) Grow a p-type epitaxial silicon layer on substrate 10.
3) Grow a thin layer of silicon dioxide on the silicon layer.
4) Deposit a thin layer of silicon nitride on the silicon

dioxide layer.
5) Etch the silicon dioxide and the silicon nitride layers, and

preferentially etch the silicon layer to form strips

resulting in p-type silicon bit lines 12.
6) Etch the silicon nitride strips to form discrete segments

14 of silicon nitride over bit lines 12.
7) Thermally oxidize to form silicon dioxide strips 16 between

bit lines 12, and silicon dioxide blocks 18 between silicon

nitride segments 14 on bit lines 12.
8) Ion implant n-type material into the p-type silicon bit lines

12 to provide n-type segments 20 forming PN junction diodes

22.
9) Deposit a conductive metal such as aluminum and etch i...