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Fabrication for Light Emitting Diode Array

IP.com Disclosure Number: IPCOM000080934D
Original Publication Date: 1974-Mar-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Pickar, PB: AUTHOR [+2]

Abstract

This technique is used to form a light-emitting diode (LED) X-Y array on a monolithic substrate.

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Fabrication for Light Emitting Diode Array

This technique is used to form a light-emitting diode (LED) X-Y array on a monolithic substrate.

A mask in combination with a photolithographic and etching process is used to form parallel elongated rows (corresponding to one axis of the array) of spaced elevated regions (plateaus), on the upper surface of an epitaxial layer of a given conductivity type.

The epitaxial layer is previously grown on a semiconductor substrate.

The plateaus are used to support the LEDs of the array, which are subsequently formed thereon by a vapor epitaxy system.

The mask is provided with a spatial periodicity, e.g., 5 microns, that allows the subsequent formation of the PN diode layer exclusively on the surfaces of the parallel elevated regions (plateaus), but prevents or inhibits the formation of the PN layer on the surfaces of the lower regions (valleys) which are located between the elevated regions. Thus, the resultant elongated parallel spaced rows of the diode layer are electrically isolated from each other. The etching process step which would otherwise be required to provide this isolation is thus eliminated. B Next, the rows of the diode layer are divided along the other axis of the array to form the individual diodes. To this end, electrical isolation in the transverse direction is provided by using conventional masking, photolithing and etching techniques. As a result, an X-Y monolithic array of diodes is formed.

To provide the el...