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Producing Negatively Charged Sputtered Glass Films

IP.com Disclosure Number: IPCOM000080948D
Original Publication Date: 1974-Mar-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Harvilchuck, JM: AUTHOR [+2]

Abstract

In this process, partial pressures of gases not normally present in a sputtering chamber are provided to introduce chloride ions alone or in conjunction with desirable cationic species, into the dielectric film being sputtered to improve the qualities of the film.

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Producing Negatively Charged Sputtered Glass Films

In this process, partial pressures of gases not normally present in a sputtering chamber are provided to introduce chloride ions alone or in conjunction with desirable cationic species, into the dielectric film being sputtered to improve the qualities of the film.

In the fabrication of field-effect transistors, inversion is frequently a problem, particularly in N-channel type devices. It has been discovered that the incorporation of negatively charged ions to balance the troublesome positively charged ions that cause inversion, is a solution to the problem.

In the practice of this method, partial pressures of various gases, as for example CCl(4), PCl(3), TiCl(4), AlCl will produce the afore-discussed results.

It has been found advantageous to introduce into a conventional sputtering chamber, having a quartz target and a substrate support mounting the wafers to be coated and an RF source connected across the target electrode and substrate support electrode PCl(3), vapor at a pressure on the order of five microns. Argon at a pressure of 35 microns serves as the sputtering gas.

The PCl vapor can be introduced into the chamber through a precision leak valve. PCl within the chamber during the sputtering operation is particularly advantageous, because it provides chloride ions in the resultant sputtered film which provides a negative charge to counterbalance any positive ion charges in the film, and also results in the...