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In Situ Clean Up Oxidation of FET Channel Areas

IP.com Disclosure Number: IPCOM000080956D
Original Publication Date: 1974-Mar-01
Included in the Prior Art Database: 2005-Feb-27
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Fouts, DP: AUTHOR [+3]

Abstract

Gate oxide defects on insulated gate field-effect transistors (IGFETs) can be significantly reduced, if a clean-up oxide is grown and then removed immediately prior to gate oxide growth or deposition. If any oxygen-pervious gate dielectric layer already is present, the clean-up oxide preferably is grown underneath the layer by subjecting the layer to high-temperature treatment in an oxidizing atmosphere.

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In Situ Clean Up Oxidation of FET Channel Areas

Gate oxide defects on insulated gate field-effect transistors (IGFETs) can be significantly reduced, if a clean-up oxide is grown and then removed immediately prior to gate oxide growth or deposition. If any oxygen-pervious gate dielectric layer already is present, the clean-up oxide preferably is grown underneath the layer by subjecting the layer to high-temperature treatment in an oxidizing atmosphere.

Conventionally, an initial oxide is grown on the base silicon wafer to reduce defects and contaminates in the final gate structure which is formed later. However, the simple removal of the initial oxide prior to gate oxide growth or deposition does not provide the best cleaning action. The final gate oxide of an IGFET can be improved, if a clean-up oxidation is introduced into the process just prior to gate oxide growth or deposition. The gate oxide then is grown or deposited immediately after the clean-up oxide and its overlying layers, if any, are removed.

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